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MOSFETs

AMM12S18LB1ZXKMA1

Trans MOSFET N-CH 1.2KV 85A

Infineon Technologies AG
数据表 

产品技术规范
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Automotive
    Yes
  • Category
    Power MOSFET
  • Configuration
    Hex
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    6
  • Maximum Drain-Source Voltage (V)
    1200
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -40 to 175
  • Maximum Continuous Drain Current (A)
    85
  • Maximum Drain-Source Resistance (mOhm)
    26.4@18V
  • Typical Gate Charge @ Vgs (nC)
    83@18V
  • Typical Input Capacitance @ Vds (pF)
    2704@800V
  • Maximum Power Dissipation (mW)
    312000
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
订单数量

文档和资源

数据表
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