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2N7002K|ONSEMI|limage
2N7002K|ONSEMI|simage
MOSFETs

2N7002K

Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R

onsemi
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant
  • 环保无铅
    Active
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Maximum Continuous Drain Current (A)
    0.3
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    2000@10V
  • Typical Gate Charge @ Vgs (nC)
    0.7@10V
  • Typical Gate Charge @ 10V (nC)
    0.7
  • Typical Input Capacitance @ Vds (pF)
    50(Max)@25V
  • Maximum Power Dissipation (mW)
    350
  • Typical Turn-Off Delay Time (ns)
    30(Max)
  • Typical Turn-On Delay Time (ns)
    5(Max)
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
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