The Nexperia MOSFETs are suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is 30 V. Its maximum power dissipation is 830 mW. This MOSFET has an operating temperature range of -65°C to 150°C.
Features and Benefits:
• Suitable for logic level gate drive sources
• Very fast switching
• Surface-mounted package
• Trench MOSFET technology
Application:
• Logic level translators
• High-speed line drivers
产品技术规范
欧盟RoHS指令
Compliant
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
COMPONENTS
SVHC
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
30
Maximum Gate Threshold Voltage (V)
2.5
Operating Junction Temperature (°C)
-65 to 150
Maximum Continuous Drain Current (A)
0.3
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
5000@10V
Typical Reverse Recovery Charge (nC)
30
Typical Input Capacitance @ Vds (pF)
31@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
3.5@10V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
6.8
Maximum Power Dissipation (mW)
830
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
2800@10V|3800@4.5V
Maximum Positive Gate-Source Voltage (V)
30
Maximum Pulsed Drain Current @ TC=25°C (A)
1.2
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
350
Typical Diode Forward Voltage (V)
0.85
Typical Reverse Recovery Time (ns)
30
Maximum Diode Forward Voltage (V)
1.5
Typical Gate Threshold Voltage (V)
2
Mounting
Surface Mount
Package Height
0.95
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Pin Count
3
Lead Shape
Gull-wing
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