通用双极型晶体管

2N5416 PBFREE

Trans GP BJT PNP 300V 1A 1000mW 3-Pin TO-39 Box

Central Semiconductor

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Type

  PNP

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  350

• Maximum Collector-Emitter Voltage (V)

  300

• Maximum Base-Emitter Voltage (V)

  6

• Operating Junction Temperature (°C)

  -65 to 200

• Maximum Base Current (A)

  0.5

• Maximum Base-Emitter Saturation Voltage (V)

  1.5@5mA@50mA

• Maximum Collector-Emitter Saturation Voltage (V)

  2@5mA@50mA

• Maximum DC Collector Current (A)

  1

• Maximum Collector Cut-Off Current (nA)

  50000

• Minimum DC Current Gain

  30@50mA@10V

• Maximum Power Dissipation (mW)

  1000

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Packaging

  Box

• Diameter

  8.96

• Mounting

  Through Hole

• Package Height

  6.35

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-39

• Pin Count

  3

• Lead Shape

  Through Hole