通用双极型晶体管

2N4235

Trans GP BJT PNP 60V 1A 1000mW 3-Pin TO-39 Bag

Microchip Technology

产品技术规范

• 欧盟RoHS指令

  Not Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.21.00.95

• Automotive

  No

• PPAP

  No

• Type

  PNP

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  60

• Maximum Collector-Emitter Voltage (V)

  60

• Maximum Base-Emitter Voltage (V)

  7

• Maximum Base-Emitter Saturation Voltage (V)

  1.1@50mA@500mA|1.5@100mA@1A

• Maximum Collector-Emitter Saturation Voltage (V)

  0.4@50mA@500mA|0.6@100mA@1A

• Maximum DC Collector Current (A)

  1

• Minimum DC Current Gain

  40@0.1A@1V|30@250mA@1V|20@500mA@1V

• Maximum Power Dissipation (mW)

  1000

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Packaging

  Bag

• Diameter

  9.4(Max)

• Mounting

  Through Hole

• Package Height

  6.6(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-39

• Pin Count

  3

• Lead Shape

  Through Hole