MOSFETs

SSM10N954L,EFF

Trans MOSFET N-CH Si 10-Pin T/R Automotive AEC-Q101

Toshiba

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.29.00.55

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Dual Common Drain Quad Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Maximum Gate-Source Voltage (V)

  ±8

• Maximum Gate Threshold Voltage (V)

  1.4

• Maximum Gate-Source Leakage Current (nA)

  1000

• Typical Gate Charge @ Vgs (nC)

  34@4V

• Maximum Power Dissipation (mW)

  1400

• Typical Fall Time (ns)

  2300

• Typical Rise Time (ns)

  1300

• Typical Turn-Off Delay Time (ns)

  5300

• Typical Turn-On Delay Time (ns)

  1

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.11

• Package Width

  1.49

• Package Length

  2.98

• PCB changed

  10

• Pin Count

  10