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MOSFETs

SIRA60DP-T1-GE3

Trans MOSFET N-CH 30V 100A 8-Pin PowerPAK SO EP T/R

Vishay
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant with Exemption
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    NRND
  • 美国海关商品代码
    8541.29.00.55
  • SVHC
    Yes
  • SVHC超标
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Continuous Drain Current (A)
    100
  • Maximum Drain-Source Resistance (mOhm)
    0.94@10V
  • Typical Gate Charge @ Vgs (nC)
    38@4.5V|83@10V
  • Typical Gate Charge @ 10V (nC)
    83
  • Typical Input Capacitance @ Vds (pF)
    7650@15V
  • Maximum Power Dissipation (mW)
    5000
  • Typical Fall Time (ns)
    20|10
  • Typical Rise Time (ns)
    20|45
  • Typical Turn-Off Delay Time (ns)
    40|50
  • Typical Turn-On Delay Time (ns)
    40|15
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    56
  • Maximum Power Dissipation on PCB @ TC=25°C (W)
    5
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    65
  • Typical Diode Forward Voltage (V)
    0.7
  • Typical Gate Plateau Voltage (V)
    2.8
  • Typical Reverse Recovery Time (ns)
    63
  • Maximum Diode Forward Voltage (V)
    1.2
  • Minimum Gate Resistance (Ohm)
    0.2
  • Maximum Gate Resistance (Ohm)
    1.7
  • Mounting
    Surface Mount
  • Package Height
    1.07(Max)
  • Package Width
    5.89
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    PowerPAK SO EP
  • Pin Count
    8

文档和资源

数据表
设计资源