VishaySI1922EDH-T1-GE3MOSFETs

Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R

As an alternative to traditional transistors, the SI1922EDH-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 740 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Import TariffMay apply to this part if shipping to the United States

库存总量: 29,385 个零件

Regional Inventory: 20,385

    Total$0.39Price for 1

    20,385 In stock: 可以明天配送

    • 可以明天配送

      Ships from:
      美国
      Date Code:
      2404+
      Manufacturer Lead Time:
      16 星期
      Minimum Of :
      1
      Maximum Of:
      2999
      Country Of origin:
      中国
         
      • Price: $0.3929
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 可以明天配送

      Ships from:
      美国
      Date Code:
      2404+
      Manufacturer Lead Time:
      16 星期
      Country Of origin:
      中国
      • In Stock: 5,385
      • Price: $0.3929
    • (3000)

      可以明天配送

      Increment:
      3000
      Ships from:
      美国
      Date Code:
      2409+
      Manufacturer Lead Time:
      16 星期
      Country Of origin:
      中国
      • In Stock: 15,000
      • Price: $0.1273
    • (3000)

      可以在 2 天内配送

      Ships from:
      荷兰
      Date Code:
      2415+
      Manufacturer Lead Time:
      16 星期
      Country Of origin:
      中国
      • In Stock: 9,000
      • Price: $0.1167

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