产品技术规范
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Process Technology
TrenchT2
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
220
Maximum Drain-Source Resistance (mOhm)
3.5@10V
Typical Gate Charge @ Vgs (nC)
112@10V
Typical Gate Charge @ 10V (nC)
112
Typical Input Capacitance @ Vds (pF)
6820@25V
Maximum Power Dissipation (mW)
360000
Typical Fall Time (ns)
21
Typical Rise Time (ns)
21
Typical Turn-Off Delay Time (ns)
31
Typical Turn-On Delay Time (ns)
15
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
Through Hole
Package Height
9.15(Max)
Package Width
4.83(Max)
Package Length
10.66(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3