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MOSFETs

IPN80R3K3P7ATMA1

Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) SOT-223 T/R

Infineon Technologies AG
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant with Exemption
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    NRND
  • 美国海关商品代码
    8541.29.00.55
  • SVHC
    Yes
  • SVHC超标
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    800
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    3.5
  • Maximum Continuous Drain Current (A)
    1.9
  • Maximum Drain-Source Resistance (mOhm)
    3300@10V
  • Typical Gate Charge @ Vgs (nC)
    5.8@10V
  • Typical Gate Charge @ 10V (nC)
    5.8
  • Typical Input Capacitance @ Vds (pF)
    120@500V
  • Maximum Power Dissipation (mW)
    6100
  • Typical Fall Time (ns)
    40
  • Typical Rise Time (ns)
    10
  • Typical Turn-Off Delay Time (ns)
    40
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    2800@10V
  • Mounting
    Surface Mount
  • Package Height
    1.6 mm
  • Package Width
    3.5 mm
  • Package Length
    6.5 mm
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-223
  • Pin Count
    3

文档和资源

数据表
设计资源