产品技术规范
欧盟RoHS指令
Compliant with Exemption
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
8541.29.00.55
SVHC
Yes
SVHC超标
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Triple Source
Process Technology
CoolMOS CFD7
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
20
Maximum Gate Threshold Voltage (V)
4.5
Maximum Continuous Drain Current (A)
33
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
75@10V
Typical Gate Charge @ Vgs (nC)
67@10V
Typical Gate Charge @ 10V (nC)
67
Typical Input Capacitance @ Vds (pF)
2721@400V
Maximum Power Dissipation (mW)
189000
Typical Fall Time (ns)
5
Typical Rise Time (ns)
13
Typical Turn-Off Delay Time (ns)
113
Typical Turn-On Delay Time (ns)
36
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
66@10V
Maximum Pulsed Drain Current @ TC=25°C (A)
129
Mounting
Surface Mount
Package Height
1 mm
Package Width
8 mm
Package Length
8 mm
PCB changed
4
Standard Package Name
SON
Supplier Package
VSON EP
Pin Count
4