产品技术规范
欧盟RoHS指令
Compliant with Exemption
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
IPD200N15N3GATMA1
SVHC
Yes
SVHC超标
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
150
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
50
Maximum Drain-Source Resistance (mOhm)
20@10V
Typical Gate Charge @ Vgs (nC)
23@10V
Typical Gate Charge @ 10V (nC)
23
Typical Input Capacitance @ Vds (pF)
1820@75V
Maximum Power Dissipation (mW)
150000
Typical Fall Time (ns)
6
Typical Rise Time (ns)
11
Typical Turn-Off Delay Time (ns)
23
Typical Turn-On Delay Time (ns)
14
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
16@8V|16@10V
Maximum Pulsed Drain Current @ TC=25°C (A)
200
Mounting
Surface Mount
Package Height
2.3 mm
Package Width
6.22 mm
Package Length
6.5 mm
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
DPAK
Pin Count
3