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FDMS8560S|ONSEMI|limage
FDMS8560S|ONSEMI|simage
MOSFETs

FDMS8560S

Trans MOSFET N-CH Si 25V 30A 8-Pin PQFN EP T/R

onsemi
数据表 

产品技术规范
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    25
  • Maximum Gate-Source Voltage (V)
    12
  • Maximum Continuous Drain Current (A)
    30
  • Maximum Drain-Source Resistance (mOhm)
    1.8@10V
  • Typical Gate Charge @ Vgs (nC)
    32@4.5V|68@10V
  • Typical Gate Charge @ 10V (nC)
    68
  • Typical Input Capacitance @ Vds (pF)
    4350@13V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    5
  • Typical Rise Time (ns)
    6
  • Typical Turn-Off Delay Time (ns)
    45
  • Typical Turn-On Delay Time (ns)
    13
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.05(Max) mm
  • Package Width
    5.8 mm
  • Package Length
    4.9 mm
  • PCB changed
    8
  • Standard Package Name
    QFN
  • Supplier Package
    PQFN EP
  • Pin Count
    8
  • Lead Shape
    No Lead

文档和资源

数据表
设计资源