MOSFET

CSD25310Q2

Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R

Texas Instruments

제품 기술 사양

• 유럽 연합 RoHS 명령어

  Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  COMPONENTS

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single Quad Source

• Channel Mode

  Enhancement

• Channel Type

  P

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  20

• Maximum Gate-Source Voltage (V)

  ±8

• Maximum Gate Threshold Voltage (V)

  1.1

• Maximum Continuous Drain Current (A)

  20

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  23.9@4.5V

• Typical Gate Charge @ Vgs (nC)

  3.6@4.5V

• Typical Gate to Drain Charge (nC)

  0.5

• Typical Input Capacitance @ Vds (pF)

  504@10V

• Maximum Power Dissipation (mW)

  2900

• Typical Fall Time (ns)

  5

• Typical Rise Time (ns)

  15

• Typical Turn-Off Delay Time (ns)

  15

• Typical Turn-On Delay Time (ns)

  8

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Gate Threshold Voltage (V)

  0.85

• Mounting

  Surface Mount

• Package Height

  0.75

• Package Width

  2

• Package Length

  2

• PCB changed

  6

• Standard Package Name

  SON

• Supplier Package

  WSON EP

• Pin Count

  6

• Lead Shape

  No Lead