제품 기술 사양
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
19
Maximum Continuous Drain Current (A)
115
Maximum Drain-Source Resistance (mOhm)
22.3@15V
Typical Gate Charge @ Vgs (nC)
211@15V
Typical Input Capacitance @ Vds (pF)
6085@1000V
Maximum Power Dissipation (mW)
556000
Typical Fall Time (ns)
13
Typical Rise Time (ns)
33
Typical Turn-Off Delay Time (ns)
65
Typical Turn-On Delay Time (ns)
34
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Industrial
Packaging
Tube
Mounting
Through Hole
Package Height
23.63(Max)
Package Width
5.21(Max)
Package Length
16.13(Max)
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4
Lead Shape
Through Hole