CCS020M12CM2

製品技術仕様

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  8541.29.00.95

• SVHC

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Hex

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  6

• Maximum Drain-Source Voltage (V)

  1200

• Maximum Gate-Source Voltage (V)

  25

• Maximum Gate Threshold Voltage (V)

  2.2(Typ)

• Maximum Continuous Drain Current (A)

  34

• Maximum Gate-Source Leakage Current (nA)

  250

• Maximum IDSS (uA)

  100

• Maximum Drain-Source Resistance (mOhm)

  98@20V

• Typical Gate Charge @ Vgs (nC)

  61.5@20V

• Typical Input Capacitance @ Vds (pF)

  900@800V

• Maximum Power Dissipation (mW)

  167000

• Typical Turn-Off Delay Time (ns)

  22.4

• Typical Turn-On Delay Time (ns)

  10

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Box

• Mounting

  Screw

• Package Height

  17 mm

• Package Width

  45 mm

• Package Length

  107.5 mm

• PCB changed

  28

• Supplier Package

  Six-Pack

• Pin Count

  28