IXYSIXFN180N10MOSFETs

Trans MOSFET N-CH Si 100V 180A 4-Pin SOT-227B

Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXFN180N10 power MOSFET. Its maximum power dissipation is 600000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.

A datasheet is only available for this product at this time.

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