Infineon Technologies AGIPB600N25N3GATMA1MOSFETs

Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R

This IPB600N25N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 136000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

2.000 pezzi: Spedisce tra 2 giorni

    Total$1,507.70Price for 1000

    • (1000)

      Spedisce tra 2 giorni

      Ships from:
      Paesi Bassi
      Date Code:
      2404+
      Manufacturer Lead Time:
      18 settimane
      Country Of origin:
      Malaysia
      • In Stock: 2.000 pezzi
      • Price: $1.5077

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