Puce IGBT

STGWT30H65FB

Trans IGBT Chip N-CH 650V 60A 260W 3-Pin(3+Tab) TO-3P Tube

STMicroelectronics

Spécifications techniques du produit

• 欧盟RoHS指令

  Compliant with Exemption

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Obsolete

• 美国海关商品代码

  EA

• SVHC

  Yes

• SVHC超标

  Yes

• Automotive

  No

• PPAP

  No

• Technology

  Field Stop|Trench

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  650

• Typical Collector-Emitter Saturation Voltage (V)

  1.55

• Maximum Continuous DC Collector Current (A)

  60

• Maximum Gate Emitter Leakage Current (uA)

  0.25

• Maximum Power Dissipation (mW)

  260

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Industrial

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  18.7

• Package Width

  4.8

• Package Length

  15.6

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-3P

• Pin Count

  3

• Lead Shape

  Through Hole