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MOSFET

NVMFS6H864NWFT1G

Trans MOSFET N-CH 80V 6.7A Automotive 5-Pin DFNW EP T/R

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Fiches techniques 

Spécifications techniques du produit
  • 유럽 연합 RoHS 명령어
    Compliant with Exemption
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Active
  • 미국 세관 상품 코드
    8541.29.00.55
  • SVHC
    Yes
  • SVHC 기준 초과
    Yes
  • Automotive
    Yes
  • PPAP
    Yes
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    80
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    6.7
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    10
  • Maximum Drain-Source Resistance (mOhm)
    32@10V
  • Typical Gate Charge @ Vgs (nC)
    6.9@10V
  • Typical Gate Charge @ 10V (nC)
    6.9
  • Typical Input Capacitance @ Vds (pF)
    370@40V
  • Maximum Power Dissipation (mW)
    3500
  • Typical Fall Time (ns)
    13
  • Typical Rise Time (ns)
    18
  • Typical Turn-Off Delay Time (ns)
    16
  • Typical Turn-On Delay Time (ns)
    7
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.05(Max)
  • Package Width
    5.9
  • Package Length
    4.9
  • PCB changed
    5
  • Standard Package Name
    DFN
  • Supplier Package
    DFNW EP
  • Pin Count
    5
  • Lead Shape
    Flat

Documentation et ressources

Fiches techniques
Ressources de conception