Spécifications techniques du produit
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
19
Maximum Gate Threshold Voltage (V)
3.6
Operating Junction Temperature (°C)
-40 to 175
Maximum Continuous Drain Current (A)
100
Maximum Gate-Source Leakage Current (nA)
250
Maximum IDSS (uA)
50
Maximum Drain-Source Resistance (mOhm)
28.8@15V
Typical Gate Charge @ Vgs (nC)
162@15V
Typical Gate to Drain Charge (nC)
50
Typical Gate to Source Charge (nC)
49
Typical Reverse Recovery Charge (nC)
928
Typical Input Capacitance @ Vds (pF)
4818@1000V
Typical Reverse Transfer Capacitance @ Vds (pF)
12@1000V
Minimum Gate Threshold Voltage (V)
1.8
Typical Output Capacitance (pF)
180
Maximum Power Dissipation (mW)
469000
Typical Fall Time (ns)
14
Typical Rise Time (ns)
33
Typical Turn-Off Delay Time (ns)
57
Typical Turn-On Delay Time (ns)
29
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Industrial
Packaging
Tube
Maximum Pulsed Drain Current @ TC=25°C (A)
200
Typical Diode Forward Voltage (V)
4.6
Typical Reverse Recovery Time (ns)
34
Typical Gate Threshold Voltage (V)
2.5
Maximum Positive Gate-Source Voltage (V)
19
Mounting
Through Hole
Package Height
23.47
Package Width
5.02
Package Length
15.94
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4
Lead Shape
Through Hole