VishaySI1922EDH-T1-GE3MOSFET

Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R

As an alternative to traditional transistors, the SI1922EDH-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 740 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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Total en stock: 29 385 pièces

Regional Inventory: 20 385

    Total$0.39Price for 1

    20 385 en stock: Prêt à être expédié le lendemain

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      Ships from:
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      Date Code:
      2404+
      Manufacturer Lead Time:
      16 semaines
      Minimum Of :
      1
      Maximum Of:
      2999
      Country Of origin:
      Chine
         
      • Price: $0.3929
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Prêt à être expédié le lendemain

      Ships from:
      États Unis
      Date Code:
      2404+
      Manufacturer Lead Time:
      16 semaines
      Country Of origin:
      Chine
      • In Stock: 5 385 pièces
      • Price: $0.3929
    • (3000)

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      Increment:
      3000
      Ships from:
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      Date Code:
      2409+
      Manufacturer Lead Time:
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      Country Of origin:
      Chine
      • In Stock: 15 000 pièces
      • Price: $0.1273
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      Livraison en 2 jours

      Ships from:
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      Date Code:
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      Manufacturer Lead Time:
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      Country Of origin:
      Chine
      • In Stock: 9 000 pièces
      • Price: $0.1167

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