Infineon Technologies AGIPB600N25N3GATMA1MOSFET

Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R

This IPB600N25N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 136000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

2 770 pièces: Livraison en 3 jours

    Total$3.31Price for 1

    • Livraison en 3 jours

      Ships from:
      Hong Kong
      Date Code:
      +
      Manufacturer Lead Time:
      0 semaines
      • In Stock: 2 770 pièces
      • Price: $3.312

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