VishaySI1922EDH-T1-GE3MOSFETs

Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R

As an alternative to traditional transistors, the SI1922EDH-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 740 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Import TariffMay apply to this part if shipping to the United States

20,385 piezas: Se puede enviar mañana

    Total$0.39Price for 1

    • Se puede enviar mañana

      Ships from:
      Estados Unidos de América
      Date Code:
      2404+
      Manufacturer Lead Time:
      16 semanas
      Minimum Of :
      1
      Maximum Of:
      2999
      Country Of origin:
      China
         
      • Price: $0.3929
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Se puede enviar mañana

      Ships from:
      Estados Unidos de América
      Date Code:
      2404+
      Manufacturer Lead Time:
      16 semanas
      Country Of origin:
      China
      • In Stock: 5,385 piezas
      • Price: $0.3929
    • (3000)

      Se puede enviar mañana

      Increment:
      3000
      Ships from:
      Estados Unidos de América
      Date Code:
      2409+
      Manufacturer Lead Time:
      16 semanas
      Country Of origin:
      China
      • In Stock: 15,000 piezas
      • Price: $0.1273

    ¿Sigue sin encontrar piezas adecuadas?

    Encuentre millones de piezas difíciles de encontrar en Verical.com, el mayor mercado mundial de componentes electrónicos.