Infineon Technologies AGIPB600N25N3GATMA1MOSFETs

Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R

This IPB600N25N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 136000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

2,000 piezas: Se puede enviar en 2 días

    Total$1,507.00Price for 1000

    • (1000)

      Se puede enviar en 2 días

      Ships from:
      Países Bajos
      Date Code:
      Manufacturer Lead Time:
      18 semanas
      Country Of origin:
      • In Stock: 2,000 piezas
      • Price: $1.5070

    ¿Sigue sin encontrar piezas adecuadas?

    Encuentre millones de piezas difíciles de encontrar en, el mayor mercado mundial de componentes electrónicos.