Cypress Semiconductor Offers Advanced FRAM Memory

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Cypress Semiconductor Corp. has introduced a 4-Mbit nonvolatile memory employing an advanced ferroelectric process, which unlike serial flash and EEPROM, performs write operations at bus speed.

Cypress’ new CY15B104Qfeatures ferroelectric random access memory (FRAM), which is nonvolatile and performs reads and writes similar to a RAM. However, unlike nonvolatile memories such as serial flash and EEPROM, the CY15B104Q avoids reliability problems and other complexities, while providing reliable data retention for more than 150 years

The functional operation of the FRAM is similar to serial flash and serial EEPROMs with the same pinout, with the major differences being the FRAM’s superior write performance, high endurance and low power consumption.

Because the CY15B104Q performs write operations at bus speed (unlike serial flash and EEPROM), data writes to memory immediately, allowing the next bus cycle to begin with no data polling requirement. A write operation already is complete when a new bus transition shifts to the device.

In addition, Cypress’ CY15B104Q offers up to 100 million times more write cycles than other nonvolatile memories like EEPROM. This is ideal for applications where the number of write cycles may be critical, such as data collection. It also helps avoid data loss from long write times due to stringent industrial controls.

As a hardware drop-in replacement, the CY15B104Q uses the high-speed serial peripheral interact (SPI) bus, which enhances the high-speed write capability of FRAM technology. The host is able to identify product density and revision, as well as the manufacturer, via the device’s read-only device ID.

Cypress’ memory comes in two packages: 8-pin small outline integrated circuit package, and 8-pin thin dual-flat no-leads package, and is able to operate in a temperature range of from –40 °C to +85 °C.

The many features of the CY15B104Q memory include:
• Very fast serial peripheral interface (SPI) of up to 40-MHz frequency
• Sophisticated write protection scheme
• Low power consumption
• Low voltage operation

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