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TTA008BQ|TOSHIBA|simage
TTA008BQ|TOSHIBA|limage
GP BJT

TTA008B,Q

Trans GP BJT PNP 80V 2A 1500mW 3-Pin TO-126N Sack

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    80
  • Maximum Collector-Emitter Voltage (V)
    80
  • Maximum Base-Emitter Voltage (V)
    7
  • Maximum Base-Emitter Saturation Voltage (V)
    1.5@100mA@1A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.5@100mA@1A|0.3@50mA@0.5A
  • Maximum DC Collector Current (A)
    2
  • Maximum Collector Cut-Off Current (nA)
    100
  • Minimum DC Current Gain
    60@1A@2V|100@0.5A@2V|80@1mA@2V
  • Maximum Power Dissipation (mW)
    1500
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Sack
  • Mounting
    Through Hole
  • Package Height
    11
  • Package Width
    3.25
  • Package Length
    8
  • PCB changed
    3
  • Supplier Package
    TO-126N
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources