Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Hex Source
Process Technology
DTMOSVI
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
15
Maximum Gate-Source Leakage Current (nA)
1000
Maximum IDSS (uA)
2
Maximum Drain-Source Resistance (mOhm)
190@10V
Typical Gate Charge @ Vgs (nC)
25@10V
Typical Gate Charge @ 10V (nC)
25
Typical Input Capacitance @ Vds (pF)
1370@300V
Maximum Power Dissipation (mW)
130000
Typical Fall Time (ns)
4
Typical Rise Time (ns)
14
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
2.3
Package Width
10.38
Package Length
9.9
PCB changed
8
Tab
Tab
Supplier Package
TOLL
Pin Count
9