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TK155U65ZRQ|TOSHIBA|simage
TK155U65ZRQ|TOSHIBA|limage
MOSFETs

TK155U65Z,RQ

Trans MOSFET N-CH Si 650V 18A 9-Pin(8+Tab) TOLL T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Hex Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    650
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    18
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    2
  • Maximum Drain-Source Resistance (mOhm)
    155@10V
  • Typical Gate Charge @ Vgs (nC)
    29@10V
  • Typical Gate Charge @ 10V (nC)
    29
  • Typical Input Capacitance @ Vds (pF)
    1635@300V
  • Maximum Power Dissipation (mW)
    150000
  • Typical Fall Time (ns)
    4
  • Typical Rise Time (ns)
    16
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.3
  • Package Width
    10.38
  • Package Length
    9.9
  • PCB changed
    8
  • Tab
    Tab
  • Supplier Package
    TOLL
  • Pin Count
    9

Documentation and Resources

Datasheets
Design resources