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SSM6N61NULF|TOSHIBA|simage
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MOSFETs

SSM6N61NU,LF

Trans MOSFET N-CH Si 20V 4A 6-Pin UDFN EP T/R Automotive AEC-Q101

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Continuous Drain Current (A)
    4
  • Maximum Drain-Source Resistance (mOhm)
    33@4.5V
  • Typical Gate Charge @ Vgs (nC)
    3.6@4.5V
  • Typical Input Capacitance @ Vds (pF)
    410@10V
  • Maximum Power Dissipation (mW)
    2000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Width
    2 mm
  • Package Length
    2 mm
  • PCB changed
    6
  • Standard Package Name
    DFN
  • Supplier Package
    UDFN EP
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources