Infineon Technologies AGSPD08P06PGBTMA1MOSFETs

Trans MOSFET P-CH 60V 8.83A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R

Create an effective common drain amplifier using this SPD08P06PGBTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 42000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes sipmos technology.

2,040 parts: Ships tomorrow

    Total$0.67Price for 1

    • Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      2329+
      Manufacturer Lead Time:
      20 weeks
      Minimum Of :
      1
      Maximum Of:
      2040
      Country Of origin:
      Austria
         
      • Price: $0.6650
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      2329+
      Manufacturer Lead Time:
      20 weeks
      Country Of origin:
      Austria
      • In Stock: 2,040 parts
      • Price: $0.6650

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