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SI5435BDCT1E3|VISHAY|simage
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MOSFETs

SI5435BDC-T1-E3

Trans MOSFET P-CH 30V 4.3A 8-Pin Chip FET T/R

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Hex Drain
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    4.3
  • Maximum Drain-Source Resistance (mOhm)
    45@10V
  • Typical Gate Charge @ Vgs (nC)
    16@10V
  • Typical Gate Charge @ 10V (nC)
    16
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    20
  • Typical Rise Time (ns)
    12
  • Typical Turn-Off Delay Time (ns)
    32
  • Typical Turn-On Delay Time (ns)
    8
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.1(Max)
  • Package Width
    1.65
  • Package Length
    3.05
  • PCB changed
    8
  • Supplier Package
    Chip FET
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources