Infineon Technologies AGIPB600N25N3GATMA1MOSFETs

Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R

This IPB600N25N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 136000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

2,000 parts: Ships in 2 days

    Total$1,515.40Price for 1000

    • (1000)

      Ships in 2 days

      Ships from:
      Netherlands
      Date Code:
      2404+
      Manufacturer Lead Time:
      18 weeks
      Country Of origin:
      Malaysia
      • In Stock: 2,000 parts
      • Price: $1.5154

    Still looking for the parts you need?

    Search the world’s largest electronic component marketplace at Verical.com, with millions of hard-to-find parts available.