Diodes IncorporatedFZT658TAGP BJT

Trans GP BJT NPN 400V 0.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R

Design various electronic circuits with this versatile NPN FZT658TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 7 V.

Import TariffMay apply to this part if shipping to the United States

Total In Stock: 67,000 parts

Regional Inventory: 64,000

    Total$246.90Price for 1000

    64,000 In stock: Ships tomorrow

    • (1000)

      Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      2327+
      Manufacturer Lead Time:
      8 weeks
      Country Of origin:
      China
      • In Stock: 64,000 parts
      • Price: $0.2469
    • (1000)

      Ships in 2 days

      Ships from:
      Netherlands
      Date Code:
      2340+
      Manufacturer Lead Time:
      8 weeks
      Country Of origin:
      China
      • In Stock: 1,000 parts
      • Price: $0.254
    • (1000)

      Ships in 3 days

      Ships from:
      Hong Kong
      Date Code:
      2345+
      Manufacturer Lead Time:
      12 weeks
      Country Of origin:
      China
      • In Stock: 2,000 parts
      • Price: $0.2346

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