Bipolar Transistoren General Porpose

BUL216

Trans GP BJT NPN 800V 4A 9000mW 3-Pin(3+Tab) TO-220AB Tube

STMicroelectronics

Produktspezifikationen

• 欧盟RoHS指令

  Compliant with Exemption

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  COMPONENTS

• SVHC

  Yes

• SVHC超标

  Yes

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  1600

• Maximum Collector-Emitter Voltage (V)

  800

• Maximum Base-Emitter Voltage (V)

  9

• Maximum Base-Emitter Saturation Voltage (V)

  1.2@1.2A@1A|1.2@0.66A@2A

• Maximum Collector-Emitter Saturation Voltage (V)

  1@1.2A@1A|3@0.66A@2A

• Maximum DC Collector Current (A)

  4

• Minimum DC Current Gain

  12@400mA@5V|10@10mA@5V

• Maximum Power Dissipation (mW)

  9000

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Supplier Temperature Grade

  Industrial

• Mounting

  Through Hole

• Package Height

  9.15(Max)

• Package Width

  4.6(Max)

• Package Length

  10.4(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220AB

• Pin Count

  3

• Lead Shape

  Through Hole