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产品技术规范
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Seven Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
20
Maximum Gate Threshold Voltage (V)
4.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
23
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
5
Maximum Drain-Source Resistance (mOhm)
22@12V
Typical Gate Charge @ Vgs (nC)
150@12V
Typical Gate to Drain Charge (nC)
49
Typical Gate to Source Charge (nC)
31
Typical Reverse Recovery Charge (nC)
9000
Typical Input Capacitance @ Vds (pF)
5639@300V
Minimum Gate Threshold Voltage (V)
3.5
Typical Output Capacitance (pF)
89
Maximum Power Dissipation (mW)
390000
Typical Fall Time (ns)
9
Typical Rise Time (ns)
4
Typical Turn-Off Delay Time (ns)
150
Typical Turn-On Delay Time (ns)
30
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
20@12V
Maximum Pulsed Drain Current @ TC=25°C (A)
375
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
62
Typical Diode Forward Voltage (V)
0.82
Typical Gate Plateau Voltage (V)
5.4
Typical Reverse Recovery Time (ns)
460
Typical Gate Threshold Voltage (V)
4
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
2.3
Package Width
10.38
Package Length
9.8
PCB changed
8
Tab
Tab
Standard Package Name
SO
Supplier Package
HSOF
Pin Count
9
Family/Series
IPT60R022S7
ALIAS
SP003330410
ROHS Version
2011/65/EU, 2015/863
Quantity Packaging
2000
MSL
1
订单数量